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ADVANCED LINEAR DEVICES, INC.
ALD1108E/ALD1110E
QUAD/DUAL ELECTRICALLY PROGRAMMABLE ANALOG DEVICE (EPADTM)
FEATURES
BENEFITS
* Operates from 2V, 3V, 5V to 10V * Flexible basic circuit building block and design element * Very high resolution -- average programmable voltage
resolution of 0.1mV
* Simple, elegant single-chip solution
to trimming voltage/current values
* Direct in-circuit active element operation
and programming
* Wide dynamic range -- current levels from 0.1A
to 3000A
* Remotely and electrically trim parameters on
circuits that are physically inaccessible
* Voltage adjustment range from 1.000V to 3.000V
in 0.1mV steps Proven, non-volatile CMOS technology Typical 10 years drift of less than 2mV Usable in voltage mode or current mode High input impedance -- 1012 Very high DC current gain -- greater than 109 Device operating current has positive temperature coefficient range and negative temperature coefficient range with cross-over zero temperature coefficient current level at 68A * Tight matching and tracking of on-resistance between different devices with programming * Very low input currents and leakage currents * Low cost, monolithic technology * Application-specific or in-system programming modes * User programmable software-controlled automation * User programmability of any standard/custom configuration * Micropower operation * Available in standard PDIP, SOIC and hermetic CDIP packages * Suitable for matched-pair balanced circuit configuration * Suitable for both coarse and fine trimming applications
* * * * * *
* Usable in environmentally sealed circuits * No system overhead or active circuitry required * No mechanical moving parts -- high G-shock
tolerance
* Improved reliability, dependability, dust and
moisture resistance
* Cost and labor savings * Small footprint for high board density
applications
* Fully automated test and trimming environment
PIN CONFIGURATION
ALD1108E PN1 GN1 DN1 S12 VDN4 GN4 PN4 1 2 3 4 5 6 7 8
EPAD 4 EPAD 3 EPAD 1 EPAD 2
16 15 14
PN2 GN2 DN2 V+ S34 DN3 GN3 PN3
v+ v-
13 12 11 10 9
ORDERING INFORMATION
Operating Temperature Range* -55C to +125C 0C to +70C 0C to +70C 16-Pin CERDIP Package ALD1108E DC 16-Pin Plastic Dip Package ALD1108E PC 16-Pin SOIC Package ALD1108E SC
DC, PC, SC PACKAGE
PIN CONFIGURATION
ALD1110E 1 EPAD 1 2 3 4 v+
EPAD 2
Operating Temperature Range* -55C to +125C 0C to +70C 0C to +70C 8-Pin CERDIP Package ALD1110E DA 8-Pin Plastic Dip Package ALD1110E PA 8-Pin SOIC Package ALD1110E SA
PN1 GN1 DN1 S12, V-
8 7 6 5
PN2 GN2 DN2 V+
DA, PA, SA PACKAGE
* Contact factory for industrial temperature range
(c) 1998 Advanced Linear Devices, Inc. 415 Tasman Drive, Sunnyvale, California 94089 -1706 Tel: (408) 747-1155 Fax: (408) 747-1286 http://www.aldinc.com
APPLICATIONS
GENERAL DESCRIPTION ALD1108E/ALD1110E are monolithic quad/dual EPADs (Electrically Programmable Analog Device) that utilize CMOS MOSFET with electrically programmable threshold voltage. For a given input voltage, changing the threshold turn-on voltage of a MOSFET device precisely changes its drain on-current, resulting in an on-resistance characteristic that can be precisely set and controlled. Used as an in-circuit element for trimming or setting a combination of voltage and/or current characteristics, it can be programmed via a Personal Computer remotely and automatically via software control. Once programmed and set, the set voltage and current levels are stored indefinitely inside the device as a precisely controlled nonvolatile stored charge, which is not affected during normal operation of the device, even after power has been turned off. The ALD1108E/ALD1110E are devices built with ALD's EPAD technology, an electrically programmable device technology refined for analog applications. The ALD1108E/ALD1110E functions like a regular MOSFET transistor except with precise user preset threshold voltage. Using the ALD1108E/ALD1110E is simple and straight forward. The device is extremely versatile as a circuit element and design component. It presents the user with a wealth of possible applications, limited only by the imagination of the user and the many ways an analog MOSFET device can be used as a circuit design element. The ALD1108E/ ALD1110E do not need other active circuitry for functionality. The basic device is a monotonically adjustable device which means the device can normally be programmed to increase in threshold voltage and to decrease in drain-on current as a function of a given input bias voltage. Once adjusted, the voltage and current conditions are permanent and not reversible. However, a given EPAD device can be adjusted many times to continually increase the threshold voltage. A pair of EPAD devices can also be connected such that one device is used to adjust a parameter in one direction and the other device is used to adjust the same parameter in the other direction. The ALD1108E/ALD1110E can be pre-programmed with the ALD EPAD programmer to obtain the desired voltage and current levels. Or, they can be programmed as an active in-system element in a user system, via user designed interface circuitry. For more information, see Application Note AN1108.
* Precision PC-based electronic calibration * Automated voltage trimming or setting * Remote voltage or current adjustment of
inaccessible nodes
* PCMCIA based instrumentation trimming * Electrically adjusted resistive load * Temperature compensated current sources
and current mirrors
* Electrically trimmed/calibrated current
sources
* Permanent precision preset voltage level
shifter
* Low temperature coefficient voltage and/or
current bias circuits
* Multiple preset voltage bias circuits * Multiple channel resistor pull-up or pull-down * * * * * * * *
circuits Microprocessor based process control systems Portable data acquisition systems Battery operated terminals and instruments Remote telemetry systems Programmable gain amplifiers Low level signal conditioning Sensor and transducer bias currents Neural networks
BLOCK DIAGRAM
ALD1110E
V+(5) PN1 (1) DN1 (3) DN2 (6) PN2 (8)
~
GN1(2) GN2 (7)
EPAD 1
EPAD 2
S12 (4)
BLOCK DIAGRAM
ALD1108E
V+(13) PN (1) DN1 (3) DN2 (14) PN2 (16) PN3 (9) DN3 (11) DN4 (6) PN4 (8)
GN1(2)
S12 (4)
ALD1108E/ALD1110E
Advanced Linear Devices
~
EPAD 1
~
V- (4)
~
GN2 (15) GN3(10) GN4 (7)
EPAD 2
EPAD 3
EPAD 4
V- (5)
S34 (12)
2
ABSOLUTE MAXIMUM RATINGS
Supply voltage, V+ referenced to VSupply voltage, VS referenced to VDifferential input voltage range Power dissipation Operating temperature range PA, SA, PC, SC package DA, DC package Storage temperature range Lead temperature, 10 seconds -0.3V to +13.2V 6.6V 0.3V to V+ +0.3V 600 mW 0C to +70C -55C to +125C -65C to +150C +260C
OPERATING ELECTRICAL CHARACTERISTICS TA = 25C V+ = +5.0V unless otherwise specified
ALD1108E Parameter Supply Voltage Initial Threshold Voltage Programmable Vt Range Drain - Gate Connected Voltage Tempco Symbol V+ Vt i Vt TCVDS Min 1.2 0.990 1.000 -1.6 -0.3 0.0 +2.7 Initial Offset Voltage Tempco of VOS Differential Threshold Voltage Tempco of Differential Threshold Voltage Long Term Drift Long Term Drift Match Drain Source On Current VOS i TCVOS DV t 1 5 2.000 5 1 5 2.000 5 mV V/C V VDS1 = VDS2 1.000 Typ Max 10.0 1.010 3.000 Min 1.2 0.990 1.000 -1.6 -0.3 0.0 +2.7 1.000 ALD1110E Typ Max 10.0 1.010 3.000 Unit V V V mV/C mV/C mV/C mV/C ID = 5A ID = 50A ID = 68A ID = 500A IDS = 1A T A = 21C Test Conditions
TCDV t V t /t V t /t IDS(ON)
0.033 -0.02 -5 3.0 -0.05
0.033 -0.02 -5 3.0 -0.05
mV/C mV V mA 1000 Hours 1000 Hours VG =VD = 5V VS = 0V Vt = 1.0 VG =VD = 5V V S = 0V Vt = 3.0 V t = 1.000V
Drain Source On Current
IDS(ON)
0.8
0.8
mA
Initial Zero Tempco Voltage Zero Tempco Current Initial On-Resistance On-Resistance Match
VZTCi IZTC RON i RON
1.52 68 500 0.5
1.52 68 500 0.5
V A %
VGS = 5V VDS = 0.1V
ALD1108E/ALD1110E
Advanced Linear Devices
3
OPERATING ELECTRICAL CHARACTERISTICS (cont'd) TA = 25C V+ = +5.0V unless otherwise specified
ALD1108E Parameter Transconductance Transconductance Match Low Level Output Conductance High Level Output Conductance Drain Off Leakage Current Symbol gm gm Min Typ 1.4 25 Max Min ALD1110E Typ 1.4 25 Max Unit mA/V A/V Test Conditions VD = 10V,VG =Vt + 4.0 VD = 10V,VG =Vt + 4.0
gOL
6
6
A/V
VG = Vt +0.5V
gOH ID(OFF)
68 5 400 4 100 1
68 5 400 4 100 1
A/V pA nA pA nA pF dB Hours %
VG = Vt +4.0V
TA = 125C
Gate Leakage Current
IGSS
10
10
TA = 125C
Input Capacitance Cross Talk Relaxation Time Constant Relaxation Voltage
CISS
25 60
25 60 2 -0.3
f = 100KHz
tRLX VRLX
2 -0.3
1.0V Vt 3.0V
PROGRAMMING CHARACTERISTICS TA = 25C V+ = +5.0V unless otherwise specified
Parameter Programmable Vt Range Resolution of V t Programming Change in Vt Per Programming Pulse RV t V t / N 0.1 0.5 0.05 1 0.1 0.5 0.05 1 mV mV/ pulse Vt = 1.0V Vt = 2.5V Symbol Vt Min 1.000 ALD1108E Typ Max 3.000 Min ALD1110E Typ Max 3.000 Unit V Test Conditions
1.000
Programming Voltage Programming Current Pulse Frequency
Vp Ip pulse
11.75
12.00 2 50
12.25
11.75
12.00 2 50
12.25
V mA KHZ
ALD1108E/ALD1110E
Advanced Linear Devices
4
TYPICAL PERFORMANCE CHARACTERISTICS
OUTPUT CHARACTERISTICS
20
OUTPUT CHARACTERISTICS
+1.0
DRAIN SOURCE ON CURRENT (mA)
TA = +25C 15
DRAIN SOURCE ON CURRENT (mA)
VGS = +12V VGS = +10V VGS = + 8V VGS = + 6V
TA = +25C
VGS = +12V VGS = +10V
10
0 VGS = +6V VGS = +8V
5 VGS = + 4V VGS = + 2V 0 0 2 4 6 8 10 12
-1.0 -200 -160 -120 -80 -40 0 40 80 120 160 +200
DRAIN SOURCE ON VOLTAGE (V)
DRAIN SOURCE VOLTAGE (mV)
DRAIN SOURCE ON CURRENT vs. AMBIENT TEMPERATURE
DRAIN SOURCE ON CURRENT (mA)
6 3.0 VG = 5V 5 4 3 2 1 Vt = 3.0V 0 -50 -25 0 25 50 75 100 125 Vt = 1.0V Vt = 1.5V Vt = 2.0V Vt = 2.5V
DRAIN SOURCE ON CURRENT vs. THRESHOLD VOLTAGE
VGS = +5V 2.0 VGS = +4V TA = +25C VDS = +5.0V
DRAIN SOURCE ON CURRENT (mA)
1.0
VGS = +3V
VGS = +2V 0 0 VGS = +1V 0.5 1.0 1.5 2.0 2.5 3.0 3.5
AMBIENT TEMPERATURE (C)
THRESHOLD VOLTAGE (V)
TRANSCONDUCTANCE vs. THRESHOLD VOLTAGE
2.0 TA = +25C
HIGH LEVEL OUTPUT CONDUCTANCE vs.THRESHOLD VOLTAGE
75
HIGH LEVEL OUTPUT CONDUCTANCE (A/V)
TRANSCONDUCTANCE ( mA/V)
TA = +25C 70
1.5
1.0
60
5.0 VGS = Vt + 4.0V VDS = 10V 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
VGS = Vt + 4.0V VDS = 5.0V 50 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
THRESHOLD VOLTAGE (V)
THRESHOLD VOLTAGE (V)
ALD1108E/ALD1110E
Advanced Linear Devices
5
TYPICAL PERFORMANCE CHARACTERISTICS
THRESHOLD VOLTAGE vs. AMBIENT TEMPERATURE
4.0 VDS = VGS ID = 1.0A Vt = 3.0V Vt = 2.5V 2.0 Vt = 2.0V Vt = 1.5V 1.0 Vt = 1.0V
LOW LEVEL OUTPUT CONDUCTANCE vs. AMBIENT TEMPERATURE
12 VGS = Vt + 0.5V VDS = 5.0V
THRESHOLD VOTAGE (V)
3.0
LOW LEVEL OUTPUT CONDUCTANCE(A/V)
10 8 6 4 2
0 -50 -25 0 25 50 75 100 125
-50
-25
0
25
50
75
100
125
AMBIENT TEMPERATURE (C)
AMBIENT TEMPERATURE (C)
DRAIN OFF LEAKAGE CURRENT (pA)
TRANSCONDUCTANCE vs. AMBIENT TEMPERATURE
2.5
TRANSCONDUCTANCE (mA/V)
DRAIN OFF LEAKAGE CURRENT IDS vs. AMBIENT TEMPERATURE
600 500 400 300 200 100 0 -50 -25 0 25 50 75 100 125 IDS
2.0 1.5 1.0 0.5 0 -50 -25 0 25 50 75 100 125
AMBIENT TEMPERATURE (C)
AMBIENT TEMPERATURE (C)
HIGH LEVEL OUTPUT CONDUCTANCE vs. AMBIENT TEMPERATURE
LOW LEVEL CURRENT OUTPUT CONDUCTANCE (A/V)
100
10
LOW LEVEL OUTPUT CONDUCTANCE vs. THRESHOLD VOLTAGE
TA = +25C
HIGH LEVEL OUTPUT CONDUCTANCE (mA/V)
90 80 70 60 50 40 -50 -25 0 25 50
VGS = Vt + 4.0V VDS = 5.0V
5
VGS = Vt + 0.5V VDS = 5.0V 0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
75
100
125
AMBIENT TEMPERATURE (C)
THRESHOLD VOTAGE (V)
ALD1108E/ALD1110E
Advanced Linear Devices
6
TYPICAL PERFORMANCE CHARACTERISTICS
DRAIN SOURCE ON CURRENT, BIAS CURRENT vs. AMBIENT TEMPERATURE
DRAIN SOURCE ON CURRENT (mA)
DRAIN SOURCE ON CURRENT, BIAS CURRENT vs. AMBIENT TEMPERATURE
100
DRAIN SOURCE ON CURRENT ( A)
Zero Temperature Coefficient (ZTC) 125C
5 4 3 0C 2 -55C -25C
ZTC 125C
ZTC 125C
50
Vt = 1.0V
{
- 25C
Vt = 1.2V - 25C
{
Vt = 1.4V - 25C
{
1 0 0 1 2 3 70C 4
125C
0
5
1.0
1.2
1.4
1.6
1.8
2.0
GATE AND DRAIN SOURCE VOLTAGE (VGS = VDS) (V)
GATE AND DRAIN SOURCE VOLTAGE (VGS = VDS) (V)
CHANGE IN DIFFERENTIAL THRESHOLD VOLTAGE vs. AMBIENT TEMPERATURE
DRAIN SOURCE ON CURRENT, BIAS CURRENT (A)
CHANGE IN DIFFERENTIAL THRESHOLDVOLTAGE (mV)
+10 +8 +6 +4 +2 0 -2 -4 -6 -8 -10 -50 -25 0
10000
REPRESENTATIVE UNITS
DRAIN SOURCE ON CURRENT, BIAS CURRENT vs. ON - RESISTANCE
VDS = RON * IDS(ON) VGS = +0.9V to +5.0V VDS = 5.0V D VDS IDS(ON) S VDS = 0.5V
1000 100 10 1.0 VGS
0.1
25 50 75 100 125
0.1
1.0
10
100
1000
10000
AMBIENT TEMPERATURE (C)
ON - RESISTANCE (K)
GATE SOURCE VOLTAGE vs. DRAIN SOURCE ON CURRENT
5
DRAIN SOURCE ON CURRENT vs. OUTPUT VOLTAGE
5
DRAIN SOURCE ON CURRENT (mA)
GATE SOURCE VOLTAGE (V)
D
VDS IDS(ON)
4 3 2 1 0 0.1
VGS S
VDS = 0.5V TA = +125C
4 3
Vt = 1.000V VDS = VGS TA = -55C
VDS = 0.5V TA = +25C
TA = 0C 2 TA = +50C 1 0 0 1 2 3 TA = +125C 4 5
VDS = 5V TA = +25C VDS = 5V VDS = RON * IDS(ON) TA = +125C
1
10
100
1000
10000
DRAIN SOURCE ON CURRENT (A)
OUTPUT VOLTAGE (V)
ALD1108E/ALD1110E
Advanced Linear Devices
7
TYPICAL PERFORMANCE CHARACTERISTICS
OFFSET VOLTAGE vs. AMBIENT TEMPERATURE
3 REPRESENTATIVE UNITS
GATE LEAKAGE CURRENT (pA)
GATE LEAKAGE CURRENT vs. AMBIENT TEMPERATURE
600 500 400 300 200 100 0 IGSS
4
OFFSET VOLTAGE (mV)
2 1 0 -1 -2 -3 -4 -50 -25 0 25 50 75 100 125
-50
-25
0
25
50
75
100
125
AMBIENT TEMPERATURE (C)
AMBIENT TEMPERATURE (C)
GATE SOURCE VOLTAGE vs. ON - RESISTANCE
GATE SOURCE VOLTAGE (V)
D 4.0 +125C VGS 3.0 +25C 2.0 VDS IDS(ON)
DRAIN - GATE DIODE CONNECTED VOLTAGE TEMPCO vs. DRAIN SOURCE ON CURRENT
DRAIN- GATE DIODE CONNECTED VOLTAGE TEMPCO (mV/ C )
5 -55C TA +125C 2.5
5.0
S 0.0V VDS 5.0V
0
-2.5
1.0 0.1 1 10 100 1000 10000
-5 1 10 100 1000
ON - RESISTANCE (K)
DRAIN SOURCE ON CURRENT (A)
ALD1108E/ALD1110E
Advanced Linear Devices
8
DEFINITION OF TERMS Bias Voltage (V BIAS) Bias Voltage of an EPAD is the voltage across Gate and Source terminals with Gate and Drain connected at a specified Drain to Source Current, IDS. When IDS = 1A, Bias Voltage is identical to Threshold Voltage. Input Bias Voltage of an EPAD is the voltage across Gate and Source terminals, VGS. Output Bias Voltage of an EPAD is the voltage across Drain and Source terminals VDS at a specified Drain to Source Current, I DS . Change in Threshold Voltage Per Programming Pulse (Vt/ N) This is the voltage change in Threshold Voltage while the EPAD is being programmed with an electrical voltage pulse. This voltage change can be very small as it varies as an exponential function of Vt. Typical initial values range from 0.1 mV/step to 1.0mV/step when Vt = 1 Volt and decreases to 10V/step or lower at higher Vt values. Delta Threshold Voltage (Vt) Delta Threshold Voltage is a change in the threshold voltage of the same EPAD device after programming. Differential Threshold Voltage (DVt) Differential Threshold Voltage is the difference of Vt between the two EPAD devices, each electrically programmed to a different Vt value. This is also a fixed relative voltage that tracks with temperature, with tempco value of TC DVt for 1 volt relative Vt between two EPADs. EPADTM Electrically Programmable Analog Device is an Integrated Circuit that utilizes CMOS FET with electrically programmable Threshold Voltage. Once programmed, the set Threshold Voltage is retained indefinitely, even when power is off. Initial Threshold Voltage (Vt i) The initial Vt of a device before being electrically programmed to a new Vt value. Initial Zero Tempco Voltage (VZTCi) Initial Drain Voltage at which the Temperature Coefficient of the Drain-Gate connected Voltage, relative to the Source Voltage, is at zero, when the initial Vt is at 1.000 volt. Long Term Drift (Vt /t) Long Term Drift is the nominal change in threshold voltage of an EPAD for a time period of 1,000 hours. Long Term Drift Match (Vt /t) Long Term Drift Match is the nominal match in long term drift between two EPADs, for a time period of 1,000 hours. Monotonic Adjustment of Vt Vt Adjustment can be changed in one direction only. Offset Voltage (VOS) Offset Voltage is the small difference in Vt between two EPAD devices when the two devices have the same initial electrically programmed Vt values. Programming Voltage (Vp) The voltage at which programming of the threshold voltage of the EPAD occurs. This voltage, the control of timing of this voltage and the impedance of the voltage source is critical to the way the EPAD is programmed and its subsequent device performance. The user is advised to use an ALD EPAD programmer which has been specifically designed and developed for this task. Relaxation Time Constant (tRLX) Relaxation Time Constant is the time constant associated with the Relaxation Voltage drop after an EPAD has been programmed.
ALD1108E/ALD1110E Advanced Linear Devices 9
Relaxation Voltage (VRLX ) After programming, an EPAD threshold voltage will " relax " a small amount, which corresponds to a small loss of interface charge. This is a small, fixed voltage step and decreases at a Relaxation Time Constant. The Relaxation Voltage is the voltage change (voltage drop) after three Relaxation Time Constants. To compensate for this, an initial relaxation voltage, expressed as a percentage of the programmed Vt, can be added to the initial desired target voltage. Tempco of Differential Threshold Voltage (TCDVt ) Temperature Coefficient of Differential Threshold Voltage is the change in difference between two EPAD threshold voltages per degree C change in temperature when the two devices initially have 1V relative electrically programmed Vt difference. Tempco of Threshold Voltage (TCVt ) Temperature Coefficient of the Vt is the change in the Threshold Voltage per degree C change in temperature. Threshold Voltage (Vt ) Threshold Voltage of an EPAD is the voltage across Gate and Source when 1A is forced into the Drain terminal as the Drain and Gate are connected together. Tempco of VOS (TCVOS) Temperature Coefficient of Offset Voltage is the change in difference between two EPAD threshold voltages per degree Centigrade change in temperature when the two devices have the same initial electrically programmed Vt values. Zero Tempco Current (I ZTC ) The Drain current of an EPAD device at which Temperature Coefficient of the Drain-Gate Connected Voltage, relative to the Source Voltage, is at zero.
ALD1108E/ALD1110E
Advanced Linear Devices
10

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